suface mount package. s mhop microelectronics c orp. a SP8601 symbol v ds v gs i dm 85 w a p d c 1.47 -55 to 150 i d units parameter 20 7.2 43 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 20v 7.2a 18.5 @ vgs=4.0v 17.5 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous c -pulsed a a maximum power dissipation operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 2.5 www.samhop.com.tw jul,18,2014 1 details are subject to change without notice. t a =25 c t a =70 c a t a =70 c w dual n-channel enhancement mode field effect transistor green product esd protected. 5.8 0.94 24.5 @ vgs=3.1v 27.0 @ vgs=2.5v 20.0 @ vgs=3.7v s1 g1 s2 g2 d1 d1 d2 d2 s mini 8 p p i i n n 1 1 c
symbol min typ max units bv dss 20 v 1 i gss 1 ua v gs(th) 0.5 v m ohm v gs =4.5v , i d =1.8a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs ,i d =1.0ma v ds =16v , v gs =0v v gs =8v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua on characteristics SP8601 ver 2.5 0.95 1.5 g fs 18 s c iss 320 pf c oss 106 pf c rss 92 pf q g 13.5 nc 30 nc q gs 19 nc q gd 13.5 t d(on) 7.2 ns t r 1.4 ns t d(off) 4 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source charge v dd =16v i d =3.6a v gs =4.0v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v , i d =3.6a input capacitance output capacitance dynamic characteristics forward transconductance reverse transfer capacitance v gs =4.0v , i d =1.8a m ohm b f=1.0mhz b v ds =16v,i d =7.2a, v gs =4.0v drain-source diode characteristics and maximum ratings v sd diode forward voltage v gs =0v,i s =7.2a 0.89 1.2 v notes a.pulse test:pulse width < 10us, duty cycle < 1%. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.mounted on fr4 board of 1 inch 2 ,2oz. _ _ www.samhop.com.tw jul,18,2014 2 14.5 17.5 15.0 18.5 v gs =3.7v , i d =1.8a m ohm v gs =2.5v , i d =1.8a m ohm 22.0 27.0 12.0 12.5 18.0 v gs =3.1v , i d =1.8a m ohm 18.5 24.5 14.5 16.0 20.0 13.5
SP8601 ver 2.5 www.samhop.com.tw jul,18,2014 3 0 0 20 120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt - total power dissipation - w total power dissipation vs. ambient temperature mounted on fr-4 board of 1 inch 2 , 2oz 0.1 1 10 10 1 0.1 100 v gs =4.5v single pulse t a =25 c r ds ( on) l imit 0.01 forward bias safe operating area 100us 1ms 10 m s dc v ds - drain to source voltage - v i d - drain current - a 10 0m s transient thermal resistance vs. pulse width 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board of 1 inch 2 , 2oz single pulse pw - pulse width - s rth(ch-a) - transient thermal resistance - c/w 10s
SP8601 ver 2.5 www.samhop.com.tw jul,18,2014 4 0 0 4 12 8 1 0.8 0.6 0.4 0.2 v ds - drain to source voltage - v i d - drain current - a drain current vs. drain to source voltage v gs = 4.5 v 3.1 v 3.7 v 2.5 v 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 v gs - gate to source voltage - v i d - drain current - a forward transfer characteristics 3 25 c 75 c 125 c t a = -25 c -50 0.6 0.9 0.8 0.7 150 100 50 0 t ch - channel temperature - c v gs(off) - gate to source cut-off voltage - v gatebto soure cut-off voltage vs. channel temperature i d = 1.0ma 0.01 0.01 0.1 100 10 1 100 10 1 0.1 i d - drain current - a . y fs . - forward transfer admittance - s forward transfer admittance vs. drain current 1.0 t a = -25 c 25 c 75 c 125 c 0 10 40 30 20 100 10 1 0.1 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. drain current v gs = 2.5 v 3.1 v 4.0 v 4.5 v 0 0 10 40 30 20 8 6 4 2 v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage i d = 1.8 a 12 10 4.0 v 3.7 v 50 20 16 1.1
SP8601 ver 2.5 www.samhop.com.tw jul,18,2014 5 10 0.1 100 1000 100 10 1 v ds - drain to source voltage - v c iss ,c oss ,c rss - capacitance - pf capacitance vs. drain to source voltage 1 0.1 10 100 10 1 i d - drain current - a t d(on) ,t r ,t d(off) ,t f - switching time - ns switching characteristics q g - gate charge -nc v gs - gate to drain voltage - v dynamic input characteristics 0.01 0.1 100 10 1 0.9 0.6 0.3 0 v f(s-d) - source to drain voltage - v i f - diode forward current - a source to drain diode forward voltage 0 -50 10 40 30 20 150 100 50 0 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. channel temperature i d = 1.8 a 50 v gs = 2.5 v 3.1 v 4.0 v 4.5 v c oss c rss c iss v dd =16v v gs = 4.0 v r g =6 t d(on) t r 0 0 4 3 2 8 6 4 2 1 v dd =4v 10 v 16 v 1.8 1.5 1.2 v gs =0v 3.7 v i d = 7.2 a 10 t d(off) t f
SP8601 www.samhop.com.tw jul,18,2014 6 package outline dimensions ver 2.5 top view s mini 8 bottom view side view symbols millimeters a a1 b c d e e1 min max 0.700 0.900 0.000 0.050 0.240 0.350 0.080 0.250 e l l1 01 0.650 bsc 0.200 0.450 0.000 0 o 12 o nom 0.800 0.300 0.152 0.375 0.100 10 o l1 d l e e1 e 01 c a a1 2.800 2.900 3.000 2.700 2.800 2.900 2.200 2.300 2.400 b
8601 xxxxxx top marking definition s mini 8 product no. wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. pin 1 SP8601 www.samhop.com.tw jul,18,2014 7 ver 2.5 samhop logo
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